High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs
| Autor: | Scott M. Johnson, D. D. Lofgreen, E. A. Patten, P. M. Goetz, K. R. Olsson, M. F. Vilela, J. G. Vodicka |
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| Rok vydání: | 2010 |
| Předmět: |
Chemistry
business.industry Detector Photodetector Heterojunction Integrated circuit Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Optics law Materials Chemistry Optoelectronics Wafer Infrared detector Electrical and Electronic Engineering p–n junction business Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 39:2215-2219 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive CdZnTe substrates. The goal of this work is to evaluate the use of HgCdTe/Si for mid-wavelength/long-wavelength infrared (MWIR/LWIR) dual-band FPAs. A series of MWIR/LWIR dual-band HgCdTe triple-layer n-P-n heterojunction (TLHJ) device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. The wafers showed low macrodefect density ( |
| Databáze: | OpenAIRE |
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