Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (100) substrates by MOCVD
| Autor: | Cansong Zhao, Jin Ma, Wei Mi, Caina Luan, Hongdi Xiao, Zhao Li |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
Band gap Process Chemistry and Technology Doping Analytical chemistry chemistry.chemical_element Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Microcrystalline chemistry Electrical resistivity and conductivity Materials Chemistry Ceramics and Composites Metalorganic vapour phase epitaxy Crystallite Tin |
| Zdroj: | Ceramics International. 41:2572-2575 |
| ISSN: | 0272-8842 |
| Popis: | Tin-doped gallium oxide (Ga2O3:Sn) films with different Sn contents were deposited on MgAl2O4 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) technique. Structural analysis revealed that the films with 1% to 5% Sn were polycrystalline structure of β-Ga2O3 whereas the samples containing 8–12% Sn were microcrystalline. The resistivity of the film could be reduced by almost eleven orders of magnitude by Sn doping, the 10% Sn doped sample possessing the best conducting property with resistivity of about 3.1×10−2 Ω cm. The average transmittance for the 10% Sn doped sample exceeded 80% with a band gap of about 4.14 eV. |
| Databáze: | OpenAIRE |
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