Circuit design issues affecting present and future deep sub-micron ferroelectric random-access memories
| Autor: | Rainer Waser, Scott R. Summerfelt, Jürgen T. Rickes, Ralph H. Lanham |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Circuit design Nanotechnology Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials Control and Systems Engineering Ferroelectric RAM Materials Chemistry Ceramics and Composites Electronic engineering Critical design Electrical and Electronic Engineering Dram Random access |
| Zdroj: | Integrated Ferroelectrics. 40:65-82 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | The basic architecture of ferroelectric memories (FeRAMs) is known to be very similar to that of DRAM. Consequently, many design issues for FeRAM are already known from DRAM and have been solved by applying prior DRAM solutions. However, there are also a number of issues that are unique to FeRAM. Often these issues become critical design problems that require innovative circuit-level solutions[1]. This paper discusses some of the most relevant issues affecting present and future deep sub-micron FeRAMs. In addition, new problems that have to be solved for future FeRAMs are presented. |
| Databáze: | OpenAIRE |
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