Investigation of defect levels in 6H‐SiC single crystals

Autor: M. G. Pawłowski, M. Kozubal, M. Miczuga, M. Palczewska, Pawel Kaminski, Michal Pawlowski, Roman Kozlowski
Rok vydání: 2007
Předmět:
Zdroj: physica status solidi c. 4:2967-2971
ISSN: 1610-1642
1862-6351
Popis: Defect levels in the n-type bulk 6H-SiC have been investigated by deep level transient spectroscopy (DLTS) and photoinduced transient spectroscopy (PITS). From the DLTS spectra, four electron traps at Ec - 0.53 eV (T1), Ec - 0.64 eV (T2), Ec - 0.67 eV (T3) and Ec - 0.69 eV (T4) with concentrations of 6.4x1015, 1.1x1016, 3.0x1016 and 1.6x1016 cm–3, respectively, were revealed. The centers T1, tentatively identified with carbon vacancies, were found to be located in the vicinity of dislocations. The centers T2 and T3 were assigned to the known deep-level defect Z1/Z2 occurring both in 4H and 6H SiC polytypes. The PITS measurements revealed two shallow traps with activation energies 20 and 60 meV, as well as a deep trap at 0.66 eV. The origin of the first trap still remains unclear. The latter two traps are tentatively identified with a nitrogen atom in hexagonal site and a complex involving a boron atom and silicon antisite, respectively. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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