Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor
| Autor: | I. Ohbu, J. Allam, N. de B. Baynes, K. Ogawa, T. Mishima, J. R. A. Cleaver |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
business.industry Coplanar waveguide Transistor Physics::Optics Sampling (statistics) Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Capacitance Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law Hardware_INTEGRATEDCIRCUITS Scattering parameters Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Ultrashort pulse Hardware_LOGICDESIGN |
| Zdroj: | Optical and Quantum Electronics. 28:875-896 |
| ISSN: | 1572-817X 0306-8919 |
| DOI: | 10.1007/bf00820154 |
| Popis: | An integrated optoelectronic circuit for ultrafast sampling of multi-terminal devices is described. This is achieved using optimized photoconductive switches fabricated from low-temperature-grown GaAs, monolithic integration of the device with the sampling circuit, control of the electromagnetic modes propagating on the coplanar waveguide using microfabricated airbridges, and discrimination of guided and freely-propagating modes using a novel electrooptic sampling method. As an example, the scattering parameters associated with the propagation of a picosecond pulse through one of the gates of a dual-gate heterojunction field-effect transistor are obtained at frequencies up to 300 GHz. The inter-gate capacitance is determined by measuring the electromagnetic transient coupled between the gates. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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