A MODFET process for micrometer scale strained layer islands
| Autor: | Richard C. Compton, Lester F. Eastman, K.Y. Hur, William J. Schaff |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Micrometer scale Fabrication business.industry Electrical engineering Photoresist Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Chemical-mechanical planarization Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Solid-State Electronics. 37:231-235 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(94)90074-4 |
| Popis: | Previous studies have demonstrated that the density of misfit dislocations can be reduced by growth of strained layers on patterned substrates. In this paper, a new process sequence for the fabrication of pseudomorphic modulation-doped field effect transistors (MODFETs) on pattened GaAs substrates is presented. Semi-insulating GaAs substrates were patterned and dry etched using chemically assisted ion beam etching (CAIBE) to define a series of mesas prior to epitaxial layer growth. Double-doped, pseudomorphic MODFET layers were then grown on the substrates by molecular beam epitaxy. Using a planarization technique based on SiO2/photoresist, MODFETs with vacuum-passivated T-gates which bridge across up to 20 mesas were fabricated. Current-voltage measurements of these MODFETs show high output currents and good pinc-off characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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