Recombination at the silicon nitride/silicon interface
| Autor: | M. Kunst, J. R. Elmiger, R. Schieck |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Passivation Silicon business.industry Photoconductivity Doping chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Silicon nitride Optoelectronics Charge carrier business Short circuit Recombination |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:2418-2425 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | A contactless technique to study the characteristic quantities of the SiNx/Si interface is of great interest. To investigate this interface, the influence of the light-induced excess charge carrier concentration (Δnb) on the differential interface recombination velocity (Sdiff) at the SiNx/Si interface is studied using frequency resolved microwave conductivity measurements. Sdiff is determined for SiNx/Si systems with different doping types and doping concentrations of the Si substrate. The excess carrier concentration is measured independently from the determination of Sdiff by means of the method of the short circuit variation. Very good passivation of the Si surface by the SiNx film was observed with surface recombination velocities smaller than 10 cm/s. The experimentally obtained values of Sdiff as a function of Δnb show good agreement with calculations based on the Shockley–Read–Hall formalism. Capacity–voltage measurements enabled the determination of the interface defect density and the positive f... |
| Databáze: | OpenAIRE |
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