On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
| Autor: | Kuan-Po Lin, Kuo-Hui Yu, Kun-Wei Lin, Wen-Chau Liu, Jung-Hui Tsai, Chih-Hung Yen, Cheng-Zu Wu |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Transistor Heterojunction Low leakage Hardware_PERFORMANCEANDRELIABILITY Electronic Optical and Magnetic Materials Gallium arsenide law.invention chemistry.chemical_compound chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Microwave Ingap gaas Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 48:1522-1530 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.936502 |
| Popis: | A new field-effect transistor using a high-barrier n/sup +/ -GaAs/p/sup +/-InGaP/n-GaAs camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated. Experimentally, an ultra high gate-drain breakdown voltage of 52 V, a high drain-source operation voltage over 20 V with low leakage currents, and a high drain-source off-state breakdown voltage of 39.7 V are obtained for a 1/spl times/100 /spl mu/m/sup 2/ device. The high breakdown behavior is attributed to the use of high barrier camel-like gate and heterostructure channels to reduce the undesired leakage current. Furthermore, the studied device also shows high breakdown behavior in a high temperature environment and good microwave characteristics. Therefore, based on these characteristics, the studied device is suitable for high-breakdown, low-leakage, and high-temperature applications. |
| Databáze: | OpenAIRE |
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