High-Temperature Dependent Data Extraction and Modeling of Effective Channel Mobility in MOSFETs using Measured S-Parameters

Autor: Dae-Hyoun Jung, B. Ko, Sang-gi Lee
Rok vydání: 2009
Předmět:
Zdroj: Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2009.p-3-16
Databáze: OpenAIRE