Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)
| Autor: | G. N. Talalakin, M. Aidaraliev, N. M. Stus, Nonna V. Zotova, M. A. Remennyi, S. A. Karandashev, B. A. Matveev |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Energy conversion efficiency Heterojunction Atmospheric temperature range Double heterostructure Electroluminescence Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention law Optoelectronics business Joule heating Diode Light-emitting diode |
| Zdroj: | Semiconductors. 35:598-604 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Light-emitting diodes (LEDs) based on p-n homo-and heterostructures with InAsSb(P) and InGaAs active layers have been designed and studied. An emission power of 0.2 (λ=4.3 µm) to 1.33 mW (λ=3.3 µm) and a conversion efficiency of 30 (InAsSbP, λ=4.3 µm) to 340 mW/(A cm2) (InAsSb/InAsSbP double heterostructure (DH), λ=4.0 µm) have been achieved. The conversion efficiency decreases with increasing current, mainly owing to the Joule heating of the p-n homojunctions. In DH LEDs, the fact that the output power tends to a constant value with increasing current is not associated with active region heating. On raising the temperature from 20 to 180°C, the emission power of the (λ=3.3 and 4.3 µm) LEDs decreases, respectively, 7-and 14-fold, to become 50 (at 1.5 A) and 7 µW (at 3 A) at 180°C. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|