Deposition of Highly Conductive n+ Silicon Film for a-Si:H Thin Film Transistor

Autor:	Yue Kuo, K. Latzko
Rok vydání:	1998
Předmět:	Amorphous silicon chemistry.chemical_compound Microcrystalline Materials science Silicon chemistry Plasma-enhanced chemical vapor deposition Thin-film transistor Contact resistance Analytical chemistry chemistry.chemical_element Thin film Amorphous solid
Zdroj:	MRS Proceedings. 507
ISSN:	1946-4274 0272-9172
Popis:	Plasma enhanced chemical vapor deposition of phosphorus-doped n+ silicon film over a wide range of process conditions has been studied. The deposited films were characterized with SIMS, Raman, and XRD. An unusually abrupt change of resistivity over a small SiH4(1% PH3) flow rate has been observed and was correlated to the variation of the film's morphology from amorphous to micrycrystalline. The grains are less than 50 Å in size and has strong orientation. Amorphous silicon thin film transistors with microcrystalline n+ source and drain contacts have consistently good device characteristics. However, the contact resistance is comparable to the channel resistance when the channel length approaches 1 micrometer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c6187b08211a54b77d7b2fd57535c9ae https://doi.org/10.1557/proc-507-891 Zobrazit plný text záznamu Full text from SpringerLink