High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch
| Autor: | Takashi Nakamura, Yuichiro Nanen, Takui Sakaguchi, Seigo Mori, Masatoshi Aketa, Tsunenobu Kimoto, Hirokazu Asahara |
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| Rok vydání: | 2017 |
| Předmět: |
Power loss
Materials science business.industry Blocking (radio) Transistor Electrical engineering Schottky diode Series and parallel circuits Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law MOSFET Silicon carbide Optoelectronics Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 64:4167-4174 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Novel 3-kV 4H-SiC reverse blocking (RB) metal–oxide–semiconductor field-effect transistors (MOSFETs) have been demonstrated for high-voltage bidirectional switching applications. To achieve RB capability, a series Schottky barrier diode structure was introduced onto the backside of the 4H-SiC MOSFET. The developed SiC RB MOSFET exhibits bidirectional blocking voltage over 3 kV and a differential specific on-resistance of 20 $\text{m}\Omega ~\cdot $ cm2 at room temperature. In an inductive-load switching measurement, the RB MOSFET showed good turn-ON/-OFF characteristics at 1 kV. The bidirectional switch configured by the developed RB MOSFETs exhibited lower ON-state power loss than the series connection of the standard SiC MOSFETs at wide range of temperature and operation current, demonstrating the advantage of the SiC RB MOSFET as a high-performance bidirectional switch. |
| Databáze: | OpenAIRE |
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