A New Route to Ultra-High Density Memory Using the Micro to Nano Addressing Block (MNAB)

Autor: Kailash Gopalakrishnan, R. S. King, B. N. Kurdi, R. S. Shenoy, H. K. Wickramasinghe, Charles T. Rettner, L.D. Bozano
Rok vydání: 2006
Předmět:
Zdroj: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
DOI: 10.1109/vlsit.2006.1705256
Popis: For the first time, we demonstrate sublithographic memory read/write operation using micro to nano addressing block (MNAB) decoders. Test structures are fabricated with integrated one-time programmable oxide ROM elements addressed using MNAB devices that have 4 sub-50 nm silicon fins at 140 nm period. Functional operation is obtained for all 4-bit ROM sequences and over different ROM cell areas
Databáze: OpenAIRE