GaAs detector material made from 3-inch wafers
| Autor: | D.L. Budnitsky, D.Y. Mokeev, V. A. Novikov, A. V. Tyazhev, G.I. Ayzenshtat, O.B. Koretskaya, O.P. Tolbanov, L.S. Okaevich |
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| Rok vydání: | 2004 |
| Předmět: |
Physics
Nuclear and High Energy Physics Physics::Instrumentation and Detectors business.industry Detector Particle detector Computer Science::Other Semiconductor detector Measuring instrument Optoelectronics High Energy Physics::Experiment Point (geometry) Wafer business Gamma detection Instrumentation |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 531:121-124 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/j.nima.2004.05.103 |
| Popis: | We present first results obtained with pad detectors processed from 3 inch diameter GaAs wafers compensated with Cr. The detector characteristics are analyzed from the point of view of uniformity across the wafer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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