Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields
| Autor: | V. F. Lukichev, S. M. Asadov, S. N. Mustafaeva |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Fermi level Physics::Optics chemistry.chemical_element 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Crystal symbols.namesake chemistry Electric field 0103 physical sciences Materials Chemistry Density of states symbols Dissipation factor Electrical and Electronic Engineering Gallium 0210 nano-technology Single crystal |
| Zdroj: | Russian Microelectronics. 48:422-427 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739719660016 |
| Popis: | It was established that the variable-range-hopping mechanism of dc-conductivity takes place in the GaS single crystal at low temperatures. The parameters of localized states in the forbidden gap of studieGaS samples have been evaluated. Dielectric properties (loss tangent, real (e') and imaginary (e'') parts of complex dielectric permittivity and ac-conductivity across the layers of the GaS layered single crystals have been studied in the frequency range f = 5 × 104 to 3.5 × 107 Hz. The results demonstrate that the dielectric dispersion in the GaS single crystal has a relaxation nature. Over the studied frequency range, the ac-conductivity of the GaS crystal varies as f0.8, characteristic of hopping conduction through localized states near the Fermi level. The Fermi-level density of states, the spread of their energies, and the mean hop distance and time have been estimated. |
| Databáze: | OpenAIRE |
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