Wannier–Stark localization in InGaAs/GaAs superlattices and its application to electro‐optical devices

Autor: Yaohui Zhang, Wei Liu, Xiaobing Mei, Desheng Jiang, Ruozhen Wang, Junming Zhou
Rok vydání: 1993
Předmět:
Zdroj: Journal of Applied Physics. 74:4274-4276
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.354390
Popis: We have observed Wannier-Stark localization in strained In0.2Ga0.8As/GaAs superlattices by low- and room-temperature photocurrent spectra measurements. The experimental results are well in agreement with the theoretical predictions. A large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 mum, based on Wannier-Stark localization effects.
Databáze: OpenAIRE