Fabrication and Electrical Characterization of Ultra-Thin Body and BOX (UTBB) Back Enhanced SOI (BESOI) pMOSFET

Autor:	Joao Antonio Martino, Ricardo C. Rangel, Katia R. A. Sasaki, L. S. Yojo
Rok vydání:	2020
Předmět:	Ultra thin body Fabrication Materials science business.industry Optoelectronics Silicon on insulator Electrical and Electronic Engineering business Characterization (materials science)
Zdroj:	Journal of Integrated Circuits and Systems. 15:1-6
ISSN:	1872-0234 1807-1953
DOI:	10.29292/jics.v15i1.107
Popis:	This work analyzes the third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) built on UTBB (Ultra-Thin Body and Buried Oxide), comparing it to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces of the UTBB BESOI device improves in 67% the current drive, 122% the maximum transconductance and 223% the body factor. Operating with seven times lower back gate bias, the UTBB BESOI MOSFET presented more compatibility with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5f162b85a3e0b80d28dc70aeea934bc https://doi.org/10.29292/jics.v15i1.107 Zobrazit plný text záznamu