Rapid thermal annealing of YBaCuO thin films sputtered on substrates

Autor:	Alain J. Kreisler, Joseph M. Baixeras, F.Hosseini Teherani, François Rémi Carrié
Rok vydání:	1990
Předmět:	Superconductivity Crystallography Materials science Diffusion barrier Silicon chemistry General Engineering Analytical chemistry chemistry.chemical_element Thin film Nitride Rapid thermal annealing Layer (electronics)
Zdroj:	Journal of the Less Common Metals. :359-365
ISSN:	0022-5088
DOI:	10.1016/0022-5088(90)90234-b
Popis:	We have determined the rapid thermal annealing (RTA) conditions that optimize both the surface quality and the superconducting properties of YBaCuO films deposited on silicon-based substrates. This process has allowed a very thin nitride layer (45A) to be a good diffusion barrier; silica acting as a sticking layer. A T(onset) in the 87–91 K range has been obtained, with T(R = 0) ∼- 60 K and Jc ∼- 500 A.cm−2 at T(R = 0) 2 . Repeated RTA cycles might by a way to improve these figures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5e6675ab6b356ffa317eab5be1e84fa https://doi.org/10.1016/0022-5088(90)90234-b Zobrazit plný text záznamu