Microwave-crystallization of amorphous silicon film using carbon-overcoat as susceptor
| Autor: | Syh-Yuh Cheng, Tsun-Hsu Chang, Hoang-Jyh Leu, S. C. Fong, Tsung-Shune Chin, I.S. Tsai, Chien-Ping Wang, H.W. Chao |
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| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Materials science Metals and Alloys Nucleation Physics::Optics Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound Crystallography Chemical engineering chemistry law Condensed Matter::Superconductivity Materials Chemistry symbols Graphite Crystallite Crystallization Raman spectroscopy Microwave Susceptor |
| Zdroj: | Thin Solid Films. 519:4196-4200 |
| ISSN: | 0040-6090 |
| Popis: | Crystallization of amorphous silicon (a-Si:H) film is extremely important in many aspects of electronic devices and has been heavily explored. We demonstrate that microwave irradiation, 200 W, is able to fast-crystallize a-Si:H film using as susceptor carbon-overcoat which contains graphite and carbon nano-tube. X-ray diffraction and Raman spectra reveal that nearly full crystallization is reached within 90 s. Microwave absorption by the carbon-overcoat generates thermal energy which heats up a-Si:H film to a threshold temperature 440 ± 10 °C required for initiation of microwave crystallization. Dielectric properties of a-Si:H film facilitate its self-heating and nucleation of Si crystallites at above the threshold temperature. This method is extendable to fast-crystallize a-Si:H film on a remote and large-area basis. |
| Databáze: | OpenAIRE |
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