High‐frequency capacitive effects in resonant tunneling diodes

Autor: B. S. Perlman, D. Rhodes, X. J. Lu
Rok vydání: 1993
Předmět:
Zdroj: Journal of Applied Physics. 74:2908-2913
ISSN: 1089-7550
0021-8979
DOI: 10.1063/1.355292
Popis: The time‐varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD’s high‐frequency behavior and device applications.
Databáze: OpenAIRE