High‐frequency capacitive effects in resonant tunneling diodes
Autor: | B. S. Perlman, D. Rhodes, X. J. Lu |
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Rok vydání: | 1993 |
Předmět: | |
Zdroj: | Journal of Applied Physics. 74:2908-2913 |
ISSN: | 1089-7550 0021-8979 |
DOI: | 10.1063/1.355292 |
Popis: | The time‐varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD’s high‐frequency behavior and device applications. |
Databáze: | OpenAIRE |
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