Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures

Autor: Yu. A. Danilov, I. L. Kalentyeva, D. V. Khomitsky, A. E. Parafin, B. N. Zvonkov, O. V. Vikhrova, Aleksey Nezhdanov, Ivan Antonov
Rok vydání: 2020
Předmět:
Zdroj: Semiconductors. 54:1598-1604
ISSN: 1090-6479
1063-7826
DOI: 10.1134/s1063782620120428
Popis: The effects of KrF excimer laser pulses on the crystalline and optical properties of structures with four InxGa1 – xAs/GaAs quantum wells (x ranging from 0.08 to 0.25) are studied. The results obtained by Raman spectroscopy and reflection spectroscopy show that the high crystalline quality of the GaAs cap layer is retained after exposure to laser radiation with an energy density from 200 to 360 mJ/cm2. It is experimentally shown by photoluminescence spectroscopy and laser-annealing simulation, and by solving the problem of heat propagation in a one-dimensional GaAs-based system, that the thermal effects occurring in heterostructures under pulsed laser irradiation below the GaAs melting threshold lead to mechanical-stress relaxation. At the initial stages of this process, point defects appear in InxGa1 – xAs/GaAs quantum wells which lead to a “red” shift of the photoluminescence emission peaks of the quantum wells and serve as nonradiative-recombination centers, which causes photoluminescence quenching.
Databáze: OpenAIRE
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