Pulsed Laser Irradiation of GaAs-Based Light-Emitting Structures
Autor: | Yu. A. Danilov, I. L. Kalentyeva, D. V. Khomitsky, A. E. Parafin, B. N. Zvonkov, O. V. Vikhrova, Aleksey Nezhdanov, Ivan Antonov |
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Rok vydání: | 2020 |
Předmět: |
Materials science
Photoluminescence medicine.medical_treatment 02 engineering and technology 01 natural sciences law.invention Condensed Matter::Materials Science symbols.namesake law 0103 physical sciences medicine Spectroscopy Quantum well 010302 applied physics X-ray absorption spectroscopy Excimer laser Condensed Matter::Other business.industry Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
Zdroj: | Semiconductors. 54:1598-1604 |
ISSN: | 1090-6479 1063-7826 |
DOI: | 10.1134/s1063782620120428 |
Popis: | The effects of KrF excimer laser pulses on the crystalline and optical properties of structures with four InxGa1 – xAs/GaAs quantum wells (x ranging from 0.08 to 0.25) are studied. The results obtained by Raman spectroscopy and reflection spectroscopy show that the high crystalline quality of the GaAs cap layer is retained after exposure to laser radiation with an energy density from 200 to 360 mJ/cm2. It is experimentally shown by photoluminescence spectroscopy and laser-annealing simulation, and by solving the problem of heat propagation in a one-dimensional GaAs-based system, that the thermal effects occurring in heterostructures under pulsed laser irradiation below the GaAs melting threshold lead to mechanical-stress relaxation. At the initial stages of this process, point defects appear in InxGa1 – xAs/GaAs quantum wells which lead to a “red” shift of the photoluminescence emission peaks of the quantum wells and serve as nonradiative-recombination centers, which causes photoluminescence quenching. |
Databáze: | OpenAIRE |
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