Auger electron spectroscopy analysis of SiC-whisker surfaces and SiC-whisker/alumina interfaces
| Autor: | D. N. Braski, K. B. Alexander |
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| Rok vydání: | 1995 |
| Předmět: |
Aluminium oxides
Auger electron spectroscopy Materials science Monocrystalline whisker Mechanical Engineering Whiskers Metallurgy Condensed Matter Physics Microstructure chemistry.chemical_compound chemistry Mechanics of Materials Whisker Transmission electron microscopy Silicon carbide General Materials Science Composite material |
| Zdroj: | Journal of Materials Research. 10:1016-1023 |
| ISSN: | 2044-5326 0884-2914 |
| Popis: | Auger Electron Spectroscopy (AES) has been used to examine as-received and oxidized silicon carbide whiskers and their respective whisker/matrix interfaces after fabrication into SiC-whisker-reinforced alumina composites. As-received whisker surfaces exhibited a 2–3 nm-thick near-surface region that was C-rich. Oxygen was detected at the outer surface, but diminished to near zero within 25 nm of the surface. Oxidized whiskers had 60 nm-thick SiO2 surface layers, which was in agreement with the transmission electron microscopy observations. The whisker/matrix interfaces in both composites consisted of thin (2 layers on the oxidized whiskers were ejected from the interfaces during hot-pressing. It was concluded that (i) the higher toughness of the composite fabricated with as-received SiC whiskers may be related to the higher C and lower O in its SiCw/Al2O3 interfaces, and (ii) interface composition cannot be reliably predicted using the surface composition of free whiskers prior to fabrication. |
| Databáze: | OpenAIRE |
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