Investigation of Parasitic Capacitance Effects in V-GAA Transistor via 3D PEX Methodology

Autor:	Hong-Gang Liang, Yong Yu, De-Yuan Xiao, Jing-Fei Zhu, Jing Liang, Lan-Song Ba, Ji-Bin Leng, Zheng-Yong Zhu, Yong-Jie Li, Xing-Song Su, Kobe Weng, Li Bai, Yan-Zhe Tang, Hong-Bo Sun, Gui-Lei Wang, Hong-Wen Li, Wei-Feng Xu, Bryan Kang, Abraham Yoo, Kan-Yu Cao, Chao Zhao
Rok vydání:	2022
Zdroj:	2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5beb8e619ae82dadc2b90f15d3c4d60 https://doi.org/10.1109/icsict55466.2022.9963326 Zobrazit plný text záznamu