Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers

Autor:	N. I. Iakovleva, A. V. Nikonov
Rok vydání:	2018
Předmět:	Brillouin zone Radiation Semiconductor Materials science business.industry Wavelength range Optoelectronics Electrical and Electronic Engineering Condensed Matter Physics business Ternary operation Refractive index Electronic Optical and Magnetic Materials
Zdroj:	Journal of Communications Technology and Electronics. 63:277-280
ISSN:	1555-6557 1064-2269
DOI:	10.1134/s1064226918030142
Popis:	The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5bbd330e974df334b1af0a6e265bc4d https://doi.org/10.1134/s1064226918030142 Zobrazit plný text záznamu Full text from SpringerLink