Effect of $\hbox{NH}_{3}$ $ \kappa$
| Autor: | Wen-Kuan Yeh, Fon-Shan Huang, Che-Hua Hsu, Guo-Wei Huang, Kun-Ming Chen, Cheng-Li Lin, Yi-Wen Chen, Yu-Ting Chen, Chien-Ming Lai |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 58:812-818 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2010.2101606 |
| Popis: | The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-κ/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are investigated. With postnitridation, the direct-current and 1/f noise characteristics can be improved apparently. Moreover, a hot-carrier stressing-induced threshold voltage shift can be also suppressed despite of a similar transconductance degradation when comparing with that in the device without nitridation. With the charge-pumping and low-frequency noise measurements, we find that the bulk- and interfacial-trap densities can be reduced with nitrogen incorporation. The reduction of bulk and interfacial traps can be contributed to the suppression of Gd diffusion into a high-κ layer. In this paper, appropriate post-NH3 plasma nitridation can improve the device performance and reliability and low-frequency noise for a gate-first high-κ/metal-gate nMOSFET with a Gd cap layer. |
| Databáze: | OpenAIRE |
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