Extraction noise transport time (τ) and its impact over the four noise parameters of advanced SiGe HBT

Autor:	M. A. Enciso Aguilar, Frédéric Aniel, Eloy Ramirez-Garcia, Nicolas Zerounian, L. F. Luis-Pineda
Rok vydání:	2012
Předmět:	Noise Materials science Heterojunction bipolar transistor Bipolar junction transistor Electronic engineering Flicker noise Extraction (military) Heterojunction Y-factor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Microwave
Zdroj:	CCE
DOI:	10.1109/iceee.2012.6421151
Popis:	This paper introduces some results concerning the high frequency noise analysis, along with the noise transport time (r) extraction and its impact over the microwave noise performances of SiGe heterojunction bipolar transistors (HBT). Our methodology of noise analysis can be extended to investigate the impact of the technological variations of the base over the microwave noise performances of high speed SiGe HBTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5aa1f23b5b686c4919dbf43b2c4c9cb https://doi.org/10.1109/iceee.2012.6421151 Zobrazit plný text záznamu