Tenth-micron polysilicon thin-film transistors
| Autor: | R.K. Watts, J.T.C. Lee |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Silicon business.industry Manufacturing process Polysilicon depletion effect Transistor Electrical engineering chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Electronic Optical and Magnetic Materials law.invention chemistry Thin-film transistor law Hardware_INTEGRATEDCIRCUITS Optoelectronics Static random-access memory Electrical and Electronic Engineering business Metal gate |
| Zdroj: | IEEE Electron Device Letters. 14:515-517 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.258000 |
| Popis: | Small thin-film polysilicon transistors are of interest for load devices in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT's) with gate lengths ranging from 7 to 0.12 mu m made in large-grain polysilicon. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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