Oxide film assisted dopant diffusion in silicon carbide
| Autor: | Rusli, Victor Adedeji, Tojiddin M. Saliev, Kerlit Chew, Chin-Che Tin, B. G. Atabaev, Suwan P. Mendis, I. G. Atabaev, E. N. Bakhranov |
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| Rok vydání: | 2010 |
| Předmět: |
inorganic chemicals
Materials science Silicon dioxide Inorganic chemistry complex mixtures Condensed Matter::Materials Science chemistry.chemical_compound Impurity Condensed Matter::Superconductivity Materials Chemistry Silicon carbide LOCOS Physics::Chemical Physics Dopant Doping technology industry and agriculture Metals and Alloys Nanocrystalline silicon Strained silicon Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Chemical engineering Condensed Matter::Strongly Correlated Electrons |
| Zdroj: | Thin Solid Films. 518:e118-e120 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.03.107 |
| Popis: | A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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