Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
| Autor: | Carlos H. Diaz, William Po Nien Chen, Ken Ichi Goto, Pin Su |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Equivalent series resistance Renewable Energy Sustainability and the Environment business.industry Nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Oxide semiconductor Nanoelectronics MOSFET Materials Chemistry Electrochemistry Optoelectronics Extraction methods Field-effect transistor Carrier velocity business Nanoscopic scale |
| Zdroj: | Journal of The Electrochemical Society. 156:H34 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.3005569 |
| Popis: | As strained-silicon and ultrashallow junction USJ techniques are widely used to optimize the carrier velocity and parasitic resistances in metal oxide semiconductor field effect transistors MOSFETs, an accurate determination of the parasitic source/drain series resistance Rsd for these nanoscale MOSFETs becomes a crucial issue. Because the series resistance may counteract the mobility enhancement in these strained devices, an accurate Rsd value has to be used in the extraction of intrinsic effective mobility eff during process development. Furthermore, the Rsd parameter is critical to evaluate the performance of USJ engineering works. Among several studies regarding Rsd extraction in the past, 1-4 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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