Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber
| Autor: | Naoomi Yamada, Xiang Cao, Peng Wu, Thomas Tiedje |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Band gap Mechanical Engineering Alloy Earth abundant 02 engineering and technology Conductivity engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences 7. Clean energy 0104 chemical sciences Mechanics of Materials Attenuation coefficient engineering Optoelectronics General Materials Science 0210 nano-technology business High electron Solar absorber |
| Zdroj: | Materials Letters. 236:649-652 |
| ISSN: | 0167-577X |
| Popis: | Zn3-3xMg3xN2 alloy layers with x ≤ 0.3 can be epitaxially grown at a temperature as low as 140 °C. The bandgap (Eg) of Zn3-3xMg3xN2 widens from 1.2 to 2.5 eV with increasing x. The Eg value of 1.4 eV is obtained at x = 0.18, and the x = 0.18 film has a large absorption coefficient (104–105 cm−1) in the visible region. The Zn3-3xMg3xN2 with Eg = 1.4 eV shows n-type conductivity with a reasonably high electron mobility of 47 cm2 V−1 s−1. Therefore, Zn3-3xMg3xN2 is a candidate for an earth-abundant solar absorber that can be fabricated at low temperatures. |
| Databáze: | OpenAIRE |
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