Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures

Autor:	John A. Ott, Patricia M. Mooney, Silke Christiansen, Juan Cai, H. Chen, J. O. Chu
Rok vydání:	2004
Předmět:	Materials science Condensed matter physics Silicon Annealing (metallurgy) Doping General Physics and Astronomy chemistry.chemical_element Heterojunction Crystallography chemistry Transmission electron microscopy X-ray crystallography Stress relaxation Helium
Zdroj:	Journal of Applied Physics. 95:5347-5351
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1699488
Popis:	Strain relaxation and threading dislocation densities in Si1−xGex (0.15
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c580e976f6e16da6291e7d4dc70b13da https://doi.org/10.1063/1.1699488 Zobrazit plný text záznamu