Photoconductivity of ZnS and ZnSe

Autor:	C. D. Marrs, B. E. Mason
Rok vydání:	2009
Předmět:	Photon Materials science business.industry Photoconductivity Laser law.invention Electron avalanche Optics law Optical materials Optoelectronics Absorption (electromagnetic radiation) business Laser beams Excitation
DOI:	10.1520/stp26526s
Popis:	ZnS and ZnSe are important materials for laser windows and optical thin-film coatings. Understanding the laser-induced damage mechanism in optical materials provides the ability to make improved damage-resistant materials. Photoconductivity (PC) techniques have demonstrated the capability to provide information on carrier production that can lead to electron avalanche by single or multiple photon absorption processes produced by a high-intensity laser beam. A study of the linear PC using a monochromated Xe lamp and the nonlinear PC using various lasers as excitation sources will be presented for chemically vapor-deposited ZnS and ZnSe.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5734955174f3764324f90169c36eaea https://doi.org/10.1520/stp26526s Zobrazit plný text záznamu