Tunable rectification and negative differential resistance induced by asymmetric doping in phosphorene nanoribbon
Autor: | Somayeh Fotoohi |
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Rok vydání: | 2019 |
Předmět: |
Physics
Condensed matter physics Doping General Physics and Astronomy Biasing Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Spectral line 010305 fluids & plasmas symbols.namesake Phosphorene chemistry.chemical_compound Rectification chemistry Impurity 0103 physical sciences symbols Density functional theory 010306 general physics Hamiltonian (quantum mechanics) |
Zdroj: | Physics Letters A. 383:369-375 |
ISSN: | 0375-9601 |
Popis: | By using first-principles calculations based on density functional theory and non-equilibrium Green's function, we present the electronic transport properties of two kinds of devices based on armchair phosphorene nanoribbons, namely, A device, and B device. In A device, the phosphorus atoms in the center of armchair phosphorene nanoribbon have been replaced by impurity atoms of the S and Si, whereas in the B device, the impurity atoms are at the edge of ribbon. The results show that the current–voltage characteristics for both devices have striking nonlinear features and the rectifying behaviors strongly depend on the positions of impurity atoms. The highest rectification ratio is obtained about 125992 at 0.8 V bias for B device. Moreover, only for A device, robust negative differential resistance is observed with a high peak–valley ratio 27500 in the bias range [ − 0.2 , − 0.6 ] V . The mechanism of the rectification behavior is analyzed in terms of the evolution of energy levels of the related electrodes and transmission spectra as well as the projected self-consistent Hamiltonian eigenvalues with the applied bias voltage. The results indicate that the asymmetric doping of the impurity atoms can lead to a robust rectification which can be utilized to design phosphorene-base rectifier with good performance. |
Databáze: | OpenAIRE |
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