Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2 -based solar cells with atomic layer deposited Zn(O,S) buffers
| Autor: | Iver Lauermann, Thomas Walter, Frank Hergert, Max Klingsporn, Rutger Schlatmann, S. Merdes, Sebastian S. Schmidt, Florian Ziem, Tetiana Lavrenko |
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| Rok vydání: | 2015 |
| Předmět: |
Renewable Energy
Sustainability and the Environment Open-circuit voltage Chalcopyrite Chemistry Analytical chemistry Laboratory scale Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Atomic layer deposition law visual_art Solar cell visual_art.visual_art_medium Fill factor Electrical and Electronic Engineering Thin film Layer (electronics) |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 23:1493-1500 |
| ISSN: | 1062-7995 |
| Popis: | We report the development of Cd-free buffers by atomic layer deposition for chalcopyrite-based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S)2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612 mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD-Zn(O,S)-buffered devices can be characterized as stable only showing a minor drift of the open circuit voltage and the fill factor. Copyright © 2015 John Wiley & Sons, Ltd. |
| Databáze: | OpenAIRE |
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