Selective metalorganic chemical vapor deposition growth of GaAs on AlGaAs combined with in situ HCl gas etching
| Autor: | Toshio Murotani, Norio Hayafuji, Hirotaka Kizuki, Yutaka Mihashi, Nobuaki Kaneno, N. Fujii |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
congenital
hereditary and neonatal diseases and abnormalities Chemistry Inorganic chemistry technology industry and agriculture nutritional and metabolic diseases chemistry.chemical_element Crystal growth Heterojunction Chemical vapor deposition Condensed Matter Physics Isotropic etching Oxygen Inorganic Chemistry Etching (microfabrication) Materials Chemistry Metalorganic vapour phase epitaxy Layer (electronics) |
| Zdroj: | Journal of Crystal Growth. 134:35-42 |
| ISSN: | 0022-0248 |
| Popis: | Selective metalorganic chemical vapor deposition (MOCVD) growth of GaAs on Al 0.48 Ga 0.52 As combined with in situ HCl gas etching was investigated. In the case that AlGaAs surface was oxidized prior to the in situ HCl gas etching, accumulation of both oxygen and chlorine were found at the GaAs/AlGaAs regrowth interface. The dislocation density in the regrown GaAs layer was also increased to over 1×10 8 cm -2 by the existence of the accumulated oxygen and chlorine. The high quality GaAs regrown layer on AlGaAs with low dislocation density of 4.2×10 4 cm -2 was obtained by using the GaAs cap layer to prevent the oxidation of AlGaAs surface, and by the adequate AsH 3 flow rate during the HCl gas etching. It was also found that the complete removal of surface oxide on the GaAs cap layer just prior to the HCl gas etching makes perfect reduction of the accumulation of oxygen and chlorine at the GaAs/AlGaAs regrowth interface. The buried ridge waveguide laser fabrication was successfully demonstrated by the selective MOCVD growth combined with the in situ HCl gas etching. |
| Databáze: | OpenAIRE |
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