The realization of insulator-metal transition in a p-type metastable ZnSb by dual-phase nanostructure
| Autor: | Andriy Lotnyk, Guoxiang Wang, Yimin Chen, Chen Chen, Haizhou Shi, Xiang Shen |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Thickness dependent Void (astronomy) Materials science Nanostructure Condensed matter physics Annealing (metallurgy) Mechanical Engineering Metals and Alloys 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Metal Condensed Matter::Materials Science Electrical transport Mechanics of Materials Metastability visual_art 0103 physical sciences visual_art.visual_art_medium General Materials Science 0210 nano-technology |
| Zdroj: | Scripta Materialia. 186:163-168 |
| ISSN: | 1359-6462 |
| DOI: | 10.1016/j.scriptamat.2020.05.034 |
| Popis: | Insulator-metal transition (IMT) in a metastable phase of ZnSb-based films has been explored systematically. It is found that the reduction of thickness contributes to the precipitation of metastable structure and induces a wide controllable temperature span for the presence of metastable ZnSb phase, resulting in thickness dependent IMT of p-type ZnSb film during annealing process. The metastable structure can be obtained without any void generation after erbium-filling by the formation of crystalline/crystalline dual-phase nanostructure, which can improve the electrical transport and trigger IMT behavior with the temperature of 430 °C, providing a strategy for realizing multi-level data storage. |
| Databáze: | OpenAIRE |
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