High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates

Autor:	David F. Brown, Adam J. Williams, Keisuke Shinohara, Michael Johnson, Dayward Santos, Thomas C. Oh, Joel C. Wong, Shawn D. Burnham, John F. Robinson, C. Butler, Robert Grabar, Rongming Chu, S. Kim, Daniel Zehnder, Miroslav Micovic, Ivan Alvarado-Rodriguez, Andrea Corrion
Rok vydání:	2013
Předmět:	Materials science Field (physics) business.industry Transistor Wide-bandgap semiconductor Heterojunction Electronic Optical and Magnetic Materials Power (physics) law.invention Nanoelectronics law Electric field Optoelectronics Electrical and Electronic Engineering business Ohmic contact
Zdroj:	IEEE Electron Device Letters. 34:1118-1120
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2013.2273172
Popis:	We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Ωmm), enhancement-mode operation (VTH=+0.35 V), and excellent high-frequency performance (fT/fmax=50/120 GHz), which enables new applications as a high-frequency power switch or a microwave power amplifier. The gate design manages the electric field at the drain edge of the gate, which mitigates dynamic ON-resistance degradation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c5525cdf8d7f6c5a7ffd26d186fe5dc4 https://doi.org/10.1109/led.2013.2273172 Zobrazit plný text záznamu