Silicon Carbide MOSFETs for Medium Voltage Megawatt Scale Systems
| Autor: | Edward Van Brunt, Brett Hull, Scott Allen, John W. Palmour, Vipindas Pala |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Scale (ratio) Silicon chemistry.chemical_element 02 engineering and technology Network topology 01 natural sciences chemistry.chemical_compound 0103 physical sciences MOSFET Silicon carbide Electronic engineering General Materials Science Power density Diode 010302 applied physics business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | Materials Science Forum. 858:970-973 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.970 |
| Popis: | Due to their low switching energies, knee-less forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage topologies. This paper demonstrates how SiC MOSFETs can be effectively combined in series and parallel to maximize the system power density and performance. |
| Databáze: | OpenAIRE |
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