NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
| Autor: | Nurul Ezaila Alias, Toshiro Hiramoto, Shinji Miyano, Takuya Saraya, Anil Kumar |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Scheme (programming language)
Materials science Self improvement Fabrication Transistor Electronic Optical and Magnetic Materials law.invention Reliability engineering Reliability (semiconductor) law MOSFET Static random-access memory Electrical and Electronic Engineering computer computer.programming_language |
| Zdroj: | IEICE Transactions on Electronics. :620-623 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e96.c.620 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|