High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
| Autor: | Akio Wakejima, Kohji Matsunaga, Kazuki Ota, Yasuhiro Okamoto, Masahiro Tanomura, Naotaka Kuroda, Hironobu Miyamoto, Tatsuo Nakayama, Yuji Ando |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Engineering
FET amplifier business.industry Amplifier RF power amplifier Electrical engineering Electronic Optical and Magnetic Materials Electronic engineering Baseband Linear amplifier Power semiconductor device Electrical and Electronic Engineering Direct-coupled amplifier business Intermodulation |
| Zdroj: | IEICE Transactions on Electronics. :929-936 |
| ISSN: | 1745-1353 0916-8524 |
| Popis: | This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM 3 and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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