Fabrication and characterization of a GaAs lateral optical switch with Ni/Ge/Au ohmic contacts

Autor:	Guillermo M. Loubriel, Wayne H. Chang, Charles D. Mulford, S. N. Schauer, Fred J. Zutavern, Robert J. Zeto, A. M. Balekdjian, R. T. Lareau
Rok vydání:	1992
Předmět:	Fabrication Materials science Silicon Annealing (metallurgy) business.industry chemistry.chemical_element Optical switch Gallium arsenide chemistry.chemical_compound chemistry Rapid thermal processing Electronic engineering Optoelectronics Wafer business Ohmic contact
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.59065
Popis:	A process was developed for the fabrication of high power GaAs photoconductive switches with ohmic Ni/Ge/Au contact metallization in a lateral NIN switch configuration. The main features of the process were ion implanted silicon in the contact regions and rapid thermal processing for annealing the implants and alloying the metallization. A 50 mill dia. process wafer included 28 photolithographically defined switches of four different types to comparatively investigate the effects of ohmic contacts and switch dimensions on switch lifetime, together with monitors to characterize the ohmic contact process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c525f32909e9e700d93ecb27ba23f443 https://doi.org/10.1117/12.59065 Zobrazit plný text záznamu