Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

Autor:	T. E. F. M. Standaert, M. Schaepkens, P. J. Matsuo, N. R. Rueger, JJ Beulens, Gottlieb S. Oehrlein, Xi Li
Rok vydání:	1999
Předmět:	Capacitive coupling Etching (microfabrication) Chemistry Analytical chemistry Electron temperature Plasma diagnostics Surfaces and Interfaces Fluorocarbon Dielectric Plasma Condensed Matter Physics Plasma processing Surfaces Coatings and Films
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3272-3280
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.582054
Popis:	This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a constant source power level. The rate at which the dielectric coupling window is eroded is found to scale with both the peak-to-peak rf voltage and the ion current density, and the dielectric window erosion is found to influence the resulting plasma gas-phase chemistry. The changes in plasma electrical and chemical characteristics have a large impact on the surface processes occurring in inductively coupled fluorocarbon plasmas such as fluorocarbon deposition, fluorocarbon etching, SiO2 etching and Si etching. Further, we show how the selective SiO2-to-Si etch process changes with varying capacitive coupling.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c50ec25b6eff2335812964c8e91d3550 https://doi.org/10.1116/1.582054 Zobrazit plný text záznamu