Optical band gap analysis and modeling for ultra-thin high-k dielectrics in high-k/metal gate transistors
| Autor: | Dawei Hu, Dominic J. Schepis, Min Dai, Qiang Zhao, Ming Di |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Band gap 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences CMOS Electrical resistivity and conductivity 0103 physical sciences MOSFET Optoelectronics Electrical measurements 0210 nano-technology business Metal gate High-κ dielectric |
| Zdroj: | Applied Physics Letters. 113:032105 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | A highly precise band gap measurement based on deep UV spectroscopic ellipsometry along with Bruggeman effective model approximation was developed for high-k/metal gate CMOS with ultrathin EOT ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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