Influence of sulfurization time on two step grown SnS thin films
| Autor: | P. Prathap, M. Raghavender, G. Hema Chandra, M. Gurubhaskar, Y.P. Venkata Subbaiah, Narayana Thota |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry chemistry.chemical_element 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Sulfur Surfaces Coatings and Films symbols.namesake Crystallinity chemistry Sputtering 0103 physical sciences symbols Orthorhombic crystal system Thin film 0210 nano-technology Tin Raman spectroscopy Instrumentation |
| Zdroj: | Vacuum. 155:318-324 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2018.06.011 |
| Popis: | SnS thin films were prepared using a simple two-stage process. The two-stage process involved in sputtering of Sn over glass substrate followed by sulfurization of sputtered Sn at 350 °C. The sulfurization process was carried out in the ambience of sulfur for different time lengths, 10–120 min and its influence on physical properties are reported. XRD study showed that the films sulfurized at 10 min were poor in crystallinity with reflections of un-reacted tin and sulfur. As the sulfurization time (St) is increased to 60 min, a single phase orthorhombic SnS was observed with (111) preferred plane. Four distinct Raman modes at 95, 163, 190 and 220 cm−1 confirms the formation of SnS for St > 30 min, however, St |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect