| Autor: |
Hyun Sup Shin, Lkhagvasuren Baasandorj, Joon Sung Lee, Sang Keun Seung, Jung-Won Chang, Jinhee Kim, Jonghyun Song, Hyunho Noh, Seung Ran Lee, Seung-Bo Shim |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
physica status solidi (RRL) - Rapid Research Letters. 6:472-474 |
| ISSN: |
1862-6254 |
| DOI: |
10.1002/pssr.201206428 |
| Popis: |
We studied the electrical conduction in the LaAlO3/SrTiO3 (LAO/STO) interface electron system with a sub-critical LAO layer thickness of ∼3.5 unit cells (uc). It was found that the true dividing point between metallic and insulating behaviour without gating lies near the LAO thickness of 3.5 uc. Our marginally metallic 3.5 uc sample showed a sharp transition to insulating state at temperatures which strongly depended on the applied negative back-gate voltage. The superior gate-controllability of the sample was attributed to its sheet carrier density which was an order of magnitude lower than those of conducting LAO/STO samples with 4 uc or more of LAO layers. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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