Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

Autor:	Yu. M. Zadiranov, K. A. Vashanova, D. A. Livshits, M. M. Kulagina, Mikhail V. Maximov, A. E. Zhukov, N. V. Kryzhanovskaya, E. M. Arakcheeva, Eduard Moiseev, Andrey A. Lipovskii, Ivan Mukhin, A. M. Nadtochiy
Rok vydání:	2013
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Substrate (electronics) Laser law.invention Resonator chemistry Quantum dot law Etching (microfabrication) Optoelectronics Luminescence business Spectroscopy
Zdroj:	Technical Physics Letters. 39:830-833
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785013090216
Popis:	Microdisc resonators based on InAs/GaAs quantum dots separated from a GaAs substrate by selective etching and fixed to a silicon substrate by epoxy glue are studied using luminescence spectroscopy. A disc resonator 6 μm in diameter exhibits quasi-single-mode laser generation at a temperature of 78 K with a threshold power of 320 μW and λ/Δλ ∼ 27000.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c508a9b2a9d9c2b35b883a032138a80f https://doi.org/10.1134/s1063785013090216 Zobrazit plný text záznamu Plný text ve formátu PDF