High detectivity solar blind photodetector based on mechanical exfoliated hexagonal boron nitride films

Autor:	Mengting Qiu, Zhenglin Jia, Mingyang Yang, Kazhihito Nishimura, Cheng-Te Lin, Nan Jiang, Qilong Yuan
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Bioengineering General Chemistry Electrical and Electronic Engineering
Zdroj:	Nanotechnology. 34:285204
ISSN:	1361-6528 0957-4484
DOI:	10.1088/1361-6528/acccfd
Popis:	As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (R 205nm/R 280nm = 235) and high detectivity up to 1.28 × 1011 Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c4feb5de5ec7d9c72a15c9521b7a5abd https://doi.org/10.1088/1361-6528/acccfd Zobrazit plný text záznamu