P-12: Self-Aligned Bottom Gate LTPS Backplanes without Ion-Implantation Process

Autor:	Arinobu Kanegae, Kazunori Komori, Hiroshi Hayashi, Tohru Saitoh, Kenichirou Nishida
Rok vydání:	2012
Předmět:	Materials science business.industry engineering.material Ion implantation Reliability (semiconductor) Polycrystalline silicon Coating Backplane CMOS Thin-film transistor engineering Optoelectronics business Electronic circuit
Zdroj:	SID Symposium Digest of Technical Papers. 43:1090-1093
ISSN:	0097-966X
Popis:	We developed and fabricated self-aligned bottom gate LTPS backplanes without ion-implantation process. CW green laser is used to fabricate polycrystalline silicon, and self-alignment photo-sensitive SiO coating film is used as a channel etch stopper. For high performance TFT backplanes, we developed CMOS process that allows us to operate CMOS circuits. Our developed TFT shows high mobility and high reliability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c4f75c3e0231a4fccc8ea32e3b8d5eb3 https://doi.org/10.1002/j.2168-0159.2012.tb05981.x Zobrazit plný text záznamu Plný text