A 7-ns/850-mW GaAs 4-kb SRAM with little dependence on temperature
| Autor: | Minoru Noda, K. Nishitani, S. Takano, S. Matsue, H. Makino, Noriyuki Tanino, S. Kayano |
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| Rok vydání: | 1990 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Circuit design Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Dissipation law.invention law Hardware_INTEGRATEDCIRCUITS Field-effect transistor Static random-access memory Electrical and Electronic Engineering business Access time Hardware_LOGICDESIGN Electronic circuit Voltage |
| Zdroj: | IEEE Journal of Solid-State Circuits. 25:1232-1238 |
| ISSN: | 0018-9200 |
| Popis: | A GaAs 1 K*4-kb SRAM designed using a novel circuit technology is described. To reduce the temperature dependence and the scattering of the access time, it was necessary to increase the signal voltage swing and to reduce the leakage current in access transistors of unselected memory cells. In the 4-kb SRAM, source-follower circuits were adopted to increase the voltage swing, and the storage nodes of unselected memory cells were raised by about 0.6 V to reduce the subthreshold leakage current in the access transistors. The 4-kb SRAM was fabricated using 1.0- mu m self-aligned MESFETs with buried p-layers beneath the FET regions. A maximum address access time of 7 ns and a power dissipation of 850 mW were obtained for the galloping test pattern at 75 degrees C. Little change in the address access time was observed between 0 and 75 degrees C. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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