Anomalous Temperature Dependence of Recombination Radiation of Gallium Arsenide
| Autor: | V. I. Osinskii, A. Ya. Peshko |
|---|---|
| Rok vydání: | 1979 |
| Předmět: |
Condensed matter physics
Chemistry Doping Condensed Matter Physics Epitaxy Laser Electronic Optical and Magnetic Materials Gallium arsenide law.invention Condensed Matter::Materials Science chemistry.chemical_compound law Zero temperature Atomic physics Luminescence Intensity (heat transfer) Recombination radiation |
| Zdroj: | Physica Status Solidi (a). 54:577-584 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.2210540219 |
| Popis: | The results of investigations on the anomalous temperature dependence of recombination radiation of GaAs structures produced by epitaxy from gaseous and liquid phase and by laser doping are presented. On the basis of the experimental measurements and computer calculations the luminescence mechanisms with positive and zero temperature coefficients of intensity are discussed. [Russian Text Ignored]. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text